Umgaqo wePlasma Etcher

I-Inductively Coupled Plasma Etch (ICPE) sisiphumo sokuhlanganiswa kweekhemikhali kunye neenkqubo zomzimba. Umgaqo wayo osisiseko kukuba, phantsi kwevacuum kunye noxinzelelo oluphantsi, amaza kanomathotholo aveliswa yi-ICP RF umbane aphuma kwikhoyili edibanisa itoroidal. Irhasi exubeneyo yokujongisisa kumlinganiselo othile idityaniswa nokuphuma okukhazimlayo, ivelisa{2}}iplasma ephezulu. Phantsi kwempembelelo ye-RF kwi-electrode esezantsi, le plasma ibhobhoza umphezulu we-substrate, isaphula imibhobho yeekhemikhali yemathiriyeli ye-semiconductor kwindawo enepateni ye-substrate. Ezi zinto ziguquguqukayo zisabela kunye negesi ebambayo ukuze zenze iikhompawundi eziguquguqukayo, ezithi ke zihlukane ne-substrate njengeegesi kwaye zikhutshwe ngaphandle komgca we-vacuum.